Fabrication of Gate-Electrode Integrated Carbon-Nanotube Bundle Field Emitters

Emission tips and a gate electrode are integrated into a monolithic device.

A continuing effort to develop carbon- nanotube-based field emitters (cold cathodes) as high-current-density electron sources has yielded an optimized device design and a fabrication scheme to implement the design. One major element of the device design is to use a planar array of bundles of carbon nanotubes as the field-emission tips and to optimize the critical dimensions of the array (principally, heights of bundles and distances between them) to obtain high area-averaged current density and high reliability over a long operational lifetime — a concept that was discussed in more detail in “Arrays of Bundles of Carbon Nanotubes as Field Emitters” (npo-40817), NASA Tech Briefs, Vol. 31, No. 2 (February 2007), page 58. Another major element of the design is to configure the gate electrodes (anodes used to extract, accelerate, and/or focus electrons) as a ring that overhangs a recess wherein the bundles of nanotubes are located [see Figure 1(a)], such that by virtue of the proximity between the ring and the bundles, a relatively low applied potential suffices to generate the large electric field needed for emission of electrons.